All MOSFET. PHX7N60E Datasheet

 

PHX7N60E Datasheet and Replacement


   Type Designator: PHX7N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT186A
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PHX7N60E Datasheet (PDF)

 ..1. Size:75K  philips
 phx7n60e.pdf pdf_icon

PHX7N60E

Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 3.6 Ag Isolated packageRDS(ON) 1.2 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 9.1. Size:60K  philips
 phx7n40e 3.pdf pdf_icon

PHX7N60E

Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 Ag Isolated packageRDS(ON) 1 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

Datasheet: PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E , IRFB4110 , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , PMBF4416A , PMBF5484 .

History: WMB099N10HGS | BSZ035N03MSG | FTK9926 | NVTFS5826NL | IXFH110N10P | RSE002P03TL | FRM9230R

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