PHX7N60E Datasheet and Replacement
Type Designator: PHX7N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT186A
PHX7N60E substitution
PHX7N60E Datasheet (PDF)
phx7n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 3.6 Ag Isolated packageRDS(ON) 1.2 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx7n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 Ag Isolated packageRDS(ON) 1 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan
Datasheet: PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E , AON6414A , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , PMBF4416A , PMBF5484 .
History: IXTH11N80 | IXTH31N15MB
Keywords - PHX7N60E MOSFET datasheet
PHX7N60E cross reference
PHX7N60E equivalent finder
PHX7N60E lookup
PHX7N60E substitution
PHX7N60E replacement
History: IXTH11N80 | IXTH31N15MB



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