PHX7N60E Specs and Replacement

Type Designator: PHX7N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT186A

PHX7N60E substitution

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PHX7N60E datasheet

 ..1. Size:75K  philips
phx7n60e.pdf pdf_icon

PHX7N60E

Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 3.6 A g Isolated package RDS(ON) 1.2 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

 9.1. Size:60K  philips
phx7n40e 3.pdf pdf_icon

PHX7N60E

Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 A g Isolated package RDS(ON) 1 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan... See More ⇒

Detailed specifications: PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, IRFB4227, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393, PMBF4416, PMBF4416A, PMBF5484

Keywords - PHX7N60E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs