PHX7N60E Specs and Replacement
Type Designator: PHX7N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT186A
PHX7N60E substitution
- MOSFET ⓘ Cross-Reference Search
PHX7N60E datasheet
phx7n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 3.6 A g Isolated package RDS(ON) 1.2 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒
phx7n40e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 A g Isolated package RDS(ON) 1 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan... See More ⇒
Detailed specifications: PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, IRFB4227, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393, PMBF4416, PMBF4416A, PMBF5484
Keywords - PHX7N60E MOSFET specs
PHX7N60E cross reference
PHX7N60E equivalent finder
PHX7N60E pdf lookup
PHX7N60E substitution
PHX7N60E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FRS140R | 2SK2374 | WTL2602
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