All MOSFET. RQ3G100GN Datasheet

 

RQ3G100GN Datasheet and Replacement


   Type Designator: RQ3G100GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm
   Package: HSMT8
 

 RQ3G100GN substitution

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RQ3G100GN Datasheet (PDF)

 ..1. Size:2681K  rohm
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RQ3G100GN

RQ3G100GNDatasheetNch 40V 10A Power MOSFETlOutlinel HSMT8VDSS40VRDS(on)(Max.) 14.3m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackaging spe

Datasheet: RQ3E130BN , RQ3E130MN , RQ3E150BN , RQ3E150GN , RQ3E150MN , RQ3E160AD , RQ3E180AJ , RQ3E180GN , IRFB31N20D , RQ3L050GN , RQ5A030AP , RQ5E025AT , RQ5E030AJ , RQ5E035AT , RQ5E035BN , RQ5E040AJ , RQ5H020SP .

History: IPU60R1K0CE | FDB52N20TM | FDB5645 | FDB3672 | 2P829A9 | 2P821A

Keywords - RQ3G100GN MOSFET datasheet

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