RQ3G100GN Specs and Replacement

Type Designator: RQ3G100GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm

Package: HSMT8

RQ3G100GN substitution

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RQ3G100GN datasheet

 ..1. Size:2681K  rohm
 rq3g100gn.pdf pdf_icon

RQ3G100GN

RQ3G100GN Datasheet Nch 40V 10A Power MOSFET lOutline l HSMT8 VDSS 40V RDS(on)(Max.) 14.3m ID 10A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackaging spe... See More ⇒

Detailed specifications: RQ3E130BN, RQ3E130MN, RQ3E150BN, RQ3E150GN, RQ3E150MN, RQ3E160AD, RQ3E180AJ, RQ3E180GN, IRFB31N20D, RQ3L050GN, RQ5A030AP, RQ5E025AT, RQ5E030AJ, RQ5E035AT, RQ5E035BN, RQ5E040AJ, RQ5H020SP

Keywords - RQ3G100GN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.