RQ3L050GN Specs and Replacement
Type Designator: RQ3L050GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.9 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
Package: HSMT8
RQ3L050GN substitution
RQ3L050GN datasheet
rq3l050gn.pdf
RQ3L050GN Datasheet Nch 60V 12A Middle Power MOSFET lOutline l HSMT8 VDSS 60V RDS(on)(Max.) 61m ID 12A PD 14.8W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l Em... See More ⇒
Detailed specifications: RQ3E130MN , RQ3E150BN , RQ3E150GN , RQ3E150MN , RQ3E160AD , RQ3E180AJ , RQ3E180GN , RQ3G100GN , STP65NF06 , RQ5A030AP , RQ5E025AT , RQ5E030AJ , RQ5E035AT , RQ5E035BN , RQ5E040AJ , RQ5H020SP , RQ5L015SP .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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