RQ3L050GN PDF and Equivalents Search

 

RQ3L050GN Specs and Replacement

Type Designator: RQ3L050GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.9 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm

Package: HSMT8

RQ3L050GN substitution

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RQ3L050GN datasheet

 ..1. Size:3020K  rohm
 rq3l050gn.pdf pdf_icon

RQ3L050GN

RQ3L050GN Datasheet Nch 60V 12A Middle Power MOSFET lOutline l HSMT8 VDSS 60V RDS(on)(Max.) 61m ID 12A PD 14.8W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l Em... See More ⇒

Detailed specifications: RQ3E130MN , RQ3E150BN , RQ3E150GN , RQ3E150MN , RQ3E160AD , RQ3E180AJ , RQ3E180GN , RQ3G100GN , STP65NF06 , RQ5A030AP , RQ5E025AT , RQ5E030AJ , RQ5E035AT , RQ5E035BN , RQ5E040AJ , RQ5H020SP , RQ5L015SP .

History: BSC120N03MSG | TK10P60W

Keywords - RQ3L050GN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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