All MOSFET. RQ3L050GN Datasheet

 

RQ3L050GN Datasheet and Replacement


   Type Designator: RQ3L050GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: HSMT8
 

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RQ3L050GN Datasheet (PDF)

 ..1. Size:3020K  rohm
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RQ3L050GN

RQ3L050GNDatasheetNch 60V 12A Middle Power MOSFETlOutlinel HSMT8VDSS60VRDS(on)(Max.) 61mID 12APD14.8W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package.3) Pb-free lead plating ; RoHS compliantlPackaging specificationslEm

Datasheet: RQ3E130MN , RQ3E150BN , RQ3E150GN , RQ3E150MN , RQ3E160AD , RQ3E180AJ , RQ3E180GN , RQ3G100GN , IRFZ48N , RQ5A030AP , RQ5E025AT , RQ5E030AJ , RQ5E035AT , RQ5E035BN , RQ5E040AJ , RQ5H020SP , RQ5L015SP .

History: FDD3670 | RQ5E025AT | TK80X04K3 | RQ5E030AJ

Keywords - RQ3L050GN MOSFET datasheet

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