RQ5A030AP Specs and Replacement

Type Designator: RQ5A030AP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TSMT3

RQ5A030AP substitution

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RQ5A030AP datasheet

 ..1. Size:2773K  rohm
 rq5a030ap.pdf pdf_icon

RQ5A030AP

RQ5A030AP Datasheet Pch -12V -3A Middle Power MOSFET lOutline l TSMT3 VDSS -12V RDS(on)(Max.) 62m ID 3.0A PD 1.0W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen ... See More ⇒

Detailed specifications: RQ3E150BN, RQ3E150GN, RQ3E150MN, RQ3E160AD, RQ3E180AJ, RQ3E180GN, RQ3G100GN, RQ3L050GN, IRF1405, RQ5E025AT, RQ5E030AJ, RQ5E035AT, RQ5E035BN, RQ5E040AJ, RQ5H020SP, RQ5L015SP, RQ6C050UN

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs