All MOSFET. RQ5H020SP Datasheet

 

RQ5H020SP Datasheet and Replacement


   Type Designator: RQ5H020SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TSMT3
 

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RQ5H020SP Datasheet (PDF)

 ..1. Size:769K  rohm
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RQ5H020SP

RQ5H020SP Pch -45V -2.0A Power MOSFET Data SheetlOutlineVDSS-45VTSMT3 (3) RDS(on) (Max.)190mW(1) ID-2.0APD1.0W(2) lFeatures lInner circuit1) Low on - resistance.2) Built-in G-S Protection Diode.(1) Gate (2) Source 3) Small Surface Mount Package (TSMT3).(3) Drain 4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTION DIODE lPackagi

Datasheet: RQ3G100GN , RQ3L050GN , RQ5A030AP , RQ5E025AT , RQ5E030AJ , RQ5E035AT , RQ5E035BN , RQ5E040AJ , AON7403 , RQ5L015SP , RQ6C050UN , RQ6E030AT , RQ6E035AT , RQ6E045BN , RQ6E050AT , RQ6E055BN , RQ6P015SP .

History: HM30N04D | 7P20 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

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