RQ5L015SP Specs and Replacement

Type Designator: RQ5L015SP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TSMT3

RQ5L015SP substitution

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RQ5L015SP datasheet

 ..1. Size:2724K  rohm
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RQ5L015SP

RQ5L015SP Datasheet Pch -60V -1.5A Middle Power MOSFET lOutline l TSMT3 VDSS -60V RDS(on)(Max.) 280m ID 1.5A PD 1W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen... See More ⇒

Detailed specifications: RQ3L050GN, RQ5A030AP, RQ5E025AT, RQ5E030AJ, RQ5E035AT, RQ5E035BN, RQ5E040AJ, RQ5H020SP, IRFB7545, RQ6C050UN, RQ6E030AT, RQ6E035AT, RQ6E045BN, RQ6E050AT, RQ6E055BN, RQ6P015SP, RQ7E055AT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.