RQ6C050UN Specs and Replacement

Type Designator: RQ6C050UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSMT6

RQ6C050UN substitution

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RQ6C050UN datasheet

 ..1. Size:331K  rohm
 rq6c050un.pdf pdf_icon

RQ6C050UN

1.5V Drive Nch MOSFET RQ6C050UN Data Sheet Structure Dimensions Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Each lead has same dimensions Switching Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Code TR ... See More ⇒

Detailed specifications: RQ5A030AP, RQ5E025AT, RQ5E030AJ, RQ5E035AT, RQ5E035BN, RQ5E040AJ, RQ5H020SP, RQ5L015SP, AON7403, RQ6E030AT, RQ6E035AT, RQ6E045BN, RQ6E050AT, RQ6E055BN, RQ6P015SP, RQ7E055AT, RRQ020P03

Keywords - RQ6C050UN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs