All MOSFET. RQ6C050UN Datasheet

 

RQ6C050UN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQ6C050UN
   Marking Code: XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSMT6

 RQ6C050UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQ6C050UN Datasheet (PDF)

 ..1. Size:331K  rohm
 rq6c050un.pdf

RQ6C050UN RQ6C050UN

1.5V Drive Nch MOSFET RQ6C050UN Data Sheet Structure Dimensions Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Each lead has same dimensionsSwitching Abbreviated symbol : XG Packaging specifications Inner circuit Package Taping(6) (5) (4)Code TR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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