RQ7E055AT Specs and Replacement

Type Designator: RQ7E055AT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSMT8

RQ7E055AT substitution

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RQ7E055AT datasheet

 ..1. Size:2914K  rohm
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RQ7E055AT

RQ7E055AT Datasheet Pch -30V -5.5A Middle Power MOSFET lOutline l TSMT8 VDSS -30V RDS(on)(Max.) 27m ID 5.5A PD 1.5W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant lPackaging specifica... See More ⇒

Detailed specifications: RQ5L015SP, RQ6C050UN, RQ6E030AT, RQ6E035AT, RQ6E045BN, RQ6E050AT, RQ6E055BN, RQ6P015SP, 60N06, RRQ020P03, RRS110N03TB1, RS1E130GN, RS1E150GN, RS1E170GN, RS1E200AH, RS1E200BN, RS1E200GN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.