All MOSFET. RQ7E055AT Datasheet

 

RQ7E055AT Datasheet and Replacement


   Type Designator: RQ7E055AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSMT8
 

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RQ7E055AT Datasheet (PDF)

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RQ7E055AT

RQ7E055ATDatasheetPch -30V -5.5A Middle Power MOSFETlOutlinel TSMT8VDSS-30VRDS(on)(Max.) 27mID 5.5APD1.5W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plating ; RoHS compliantlPackaging specifica

Datasheet: RQ5L015SP , RQ6C050UN , RQ6E030AT , RQ6E035AT , RQ6E045BN , RQ6E050AT , RQ6E055BN , RQ6P015SP , 60N06 , RRQ020P03 , RRS110N03TB1 , RS1E130GN , RS1E150GN , RS1E170GN , RS1E200AH , RS1E200BN , RS1E200GN .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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