RRQ020P03 Specs and Replacement

Type Designator: RRQ020P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TSMT6

RRQ020P03 substitution

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RRQ020P03 datasheet

 ..1. Size:2545K  rohm
 rrq020p03.pdf pdf_icon

RRQ020P03

RRQ020P03 Datasheet Pch -30V -2A Middle Power MOSFET lOutline l TSMT6 VDSS -30V RDS(on)(Max.) 160m ID 2A PD 1.25W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen ... See More ⇒

Detailed specifications: RQ6C050UN, RQ6E030AT, RQ6E035AT, RQ6E045BN, RQ6E050AT, RQ6E055BN, RQ6P015SP, RQ7E055AT, IRFP064N, RRS110N03TB1, RS1E130GN, RS1E150GN, RS1E170GN, RS1E200AH, RS1E200BN, RS1E200GN, RS1E240BN

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs