All MOSFET. RRQ020P03 Datasheet

 

RRQ020P03 Datasheet and Replacement


   Type Designator: RRQ020P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TSMT6
 

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RRQ020P03 Datasheet (PDF)

 ..1. Size:2545K  rohm
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RRQ020P03

RRQ020P03DatasheetPch -30V -2A Middle Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 160m ID 2A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (TSMT6).3) Pb-free lead plating ; RoHS compliant.4) Halogen

Datasheet: RQ6C050UN , RQ6E030AT , RQ6E035AT , RQ6E045BN , RQ6E050AT , RQ6E055BN , RQ6P015SP , RQ7E055AT , 5N50 , RRS110N03TB1 , RS1E130GN , RS1E150GN , RS1E170GN , RS1E200AH , RS1E200BN , RS1E200GN , RS1E240BN .

Keywords - RRQ020P03 MOSFET datasheet

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