RRS110N03TB1 Specs and Replacement

Type Designator: RRS110N03TB1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm

Package: SOP-8

RRS110N03TB1 substitution

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RRS110N03TB1 datasheet

 ..1. Size:98K  rohm
 rrs110n03tb1.pdf pdf_icon

RRS110N03TB1

RRS110N03 Transistor 4V Drive Nch MOSFET RRS110N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Applications Each lead has same dimensions Switching Equivalent circuit Packaging specifications (8) (7) (6) (5) (8) (7) (6) (5) Package Tapi... See More ⇒

Detailed specifications: RQ6E030AT, RQ6E035AT, RQ6E045BN, RQ6E050AT, RQ6E055BN, RQ6P015SP, RQ7E055AT, RRQ020P03, AO4468, RS1E130GN, RS1E150GN, RS1E170GN, RS1E200AH, RS1E200BN, RS1E200GN, RS1E240BN, RS1E240GN

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