RS1E200BN Datasheet and Replacement
Type Designator: RS1E200BN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: HSOP8
RS1E200BN substitution
RS1E200BN Datasheet (PDF)
rs1e200bn.pdf

RS1E200BNDatasheetNch 30V 20A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 3.9m ID 20A PD3.0W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Fr
rs1e200gn.pdf

RS1E200GN Nch 30V 20A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)4.6mWRDS(on) at 4.5V (Max.)6.1mWID20APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
rs1e200ah.pdf

RS1E200AHDatasheetNch 30V 20A Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 5.2m ID 20A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.5) 100% Rg and
rs1e280bn.pdf

RS1E280BNDatasheetNch 30V 28A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 2.3m ID 28A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free
Datasheet: RQ6P015SP , RQ7E055AT , RRQ020P03 , RRS110N03TB1 , RS1E130GN , RS1E150GN , RS1E170GN , RS1E200AH , 20N60 , RS1E200GN , RS1E240BN , RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN .
Keywords - RS1E200BN MOSFET datasheet
RS1E200BN cross reference
RS1E200BN equivalent finder
RS1E200BN lookup
RS1E200BN substitution
RS1E200BN replacement



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