All MOSFET. RS1G260MN Datasheet

 

RS1G260MN Datasheet and Replacement


   Type Designator: RS1G260MN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 662 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: HSOP8
 

 RS1G260MN substitution

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RS1G260MN Datasheet (PDF)

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RS1G260MN

RS1G260MN Nch 40V 26A Power MOSFET DatasheetlOutlineVDSS40V(8) HSOP8(7) (6) RDS(on) at 10V (Max.)3.3mW(5) RDS(on) at 4.5V (Max.)4.4mW(1) ID26A (2) (3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS

Datasheet: RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , RS1G180MN , 10N60 , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA .

History: GP1M009A020XX | DK48N80 | AP4435GJ | CHM3055ZGP | LNH05R075 | CSFR3N60U | HGS085N10SL

Keywords - RS1G260MN MOSFET datasheet

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