All MOSFET. RS1G300GN Datasheet

 

RS1G300GN Datasheet and Replacement


   Type Designator: RS1G300GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: HSOP8
 

 RS1G300GN substitution

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RS1G300GN Datasheet (PDF)

 ..1. Size:1669K  rohm
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RS1G300GN

RS1G300GNDatasheetNch 40V 30A Power MOSFETlOutlinel HSOP8VDSS40VRDS(on)(Max.) 2.5m ID 30A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.5) 100% Rg and

Datasheet: RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , IRFB4227 , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA .

History: SWN4N65DA | NCE60H15A | 6N60KL-TMS4-T | TPA50R400C

Keywords - RS1G300GN MOSFET datasheet

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