RS1G300GN Specs and Replacement

Type Designator: RS1G300GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: HSOP8

RS1G300GN substitution

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RS1G300GN datasheet

 ..1. Size:1669K  rohm
 rs1g300gn.pdf pdf_icon

RS1G300GN

RS1G300GN Datasheet Nch 40V 30A Power MOSFET lOutline l HSOP8 VDSS 40V RDS(on)(Max.) 2.5m ID 30A PD 3W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. 5) 100% Rg and ... See More ⇒

Detailed specifications: RS1E280GN, RS1E300GN, RS1E320GN, RS1E350BN, RS1G120MN, RS1G150MN, RS1G180MN, RS1G260MN, AO3400, RS3E075AT, RSD046P05, RSD046P05FRA, RSD050N06FRA, RSD050N06TL, RSD050N10FRA, RSD080N06FRA, RSD080P05FRA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.