RS1G300GN Datasheet and Replacement
Type Designator: RS1G300GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.8 nS
Cossⓘ - Output Capacitance: 680 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: HSOP8
RS1G300GN substitution
RS1G300GN Datasheet (PDF)
rs1g300gn.pdf

RS1G300GNDatasheetNch 40V 30A Power MOSFETlOutlinel HSOP8VDSS40VRDS(on)(Max.) 2.5m ID 30A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.5) 100% Rg and
Datasheet: RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , IRF3710 , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA .
History: BUZ73AL | MP4N150 | SSM3K329R
Keywords - RS1G300GN MOSFET datasheet
RS1G300GN cross reference
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History: BUZ73AL | MP4N150 | SSM3K329R



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