All MOSFET. RS1G300GN Datasheet

 

RS1G300GN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RS1G300GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.6 nC
   trⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: HSOP8

 RS1G300GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RS1G300GN Datasheet (PDF)

 ..1. Size:1669K  rohm
 rs1g300gn.pdf

RS1G300GN RS1G300GN

RS1G300GNDatasheetNch 40V 30A Power MOSFETlOutlinel HSOP8VDSS40VRDS(on)(Max.) 2.5m ID 30A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.5) 100% Rg and

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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