RSD046P05 Datasheet. Specs and Replacement

Type Designator: RSD046P05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: SC-63

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RSD046P05 datasheet

 ..1. Size:385K  rohm
 rsd046p05.pdf pdf_icon

RSD046P05

RSD046P05 Pch 45V 4.5A Power MOSFET Datasheet lOutline VDSS -45V CPT3 (SC-63) RDS(on) (Max.) 155mW ID -4.5A (2) (1) (3) PD 15W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; ... See More ⇒

 0.1. Size:454K  rohm
 rsd046p05fra.pdf pdf_icon

RSD046P05

RSD046P05FRA Pch 45V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS -45V CPT3 (SC-63) RDS(on) (Max.) 155mW ID -4.5A (2) (1) (3) PD 15W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) ... See More ⇒

Detailed specifications: RS1E320GN, RS1E350BN, RS1G120MN, RS1G150MN, RS1G180MN, RS1G260MN, RS1G300GN, RS3E075AT, 8205A, RSD046P05FRA, RSD050N06FRA, RSD050N06TL, RSD050N10FRA, RSD080N06FRA, RSD080P05FRA, RSD100N10FRA, RSD131P10

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