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RSD046P05 PDF Specs and Replacement


   Type Designator: RSD046P05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: SC-63
 

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RSD046P05 PDF Specs

 ..1. Size:385K  rohm
rsd046p05.pdf pdf_icon

RSD046P05

RSD046P05 Pch 45V 4.5A Power MOSFET Datasheet lOutline VDSS -45V CPT3 (SC-63) RDS(on) (Max.) 155mW ID -4.5A (2) (1) (3) PD 15W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; ... See More ⇒

 0.1. Size:454K  rohm
rsd046p05fra.pdf pdf_icon

RSD046P05

RSD046P05FRA Pch 45V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS -45V CPT3 (SC-63) RDS(on) (Max.) 155mW ID -4.5A (2) (1) (3) PD 15W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) ... See More ⇒

Detailed specifications: RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , RS1G300GN , RS3E075AT , IRF3710 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 .

History: 2N3956

Keywords - RSD046P05 MOSFET specs

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