RSD050N06FRA Datasheet and Replacement
Type Designator: RSD050N06FRA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
Package: SC-63
RSD050N06FRA substitution
RSD050N06FRA Datasheet (PDF)
rsd050n06fra.pdf
Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif
rsd050n06.pdf
Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ
rsd050n06tl.pdf
Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ
rsd050n10.pdf
4V Drive Nch MOSFET RSD050N10Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed.3) Drive circuits can be simple. 3) Parallel use is easy. 9 ApplicationsSwitchingPackaging specifications Inner circuitPackage
Datasheet: RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA , P55NF06 , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , RSD140P06FRA .
History: 50N06G-TQ2-T
Keywords - RSD050N06FRA MOSFET datasheet
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History: 50N06G-TQ2-T
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