RSD131P10 Specs and Replacement

Type Designator: RSD131P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SC-63

RSD131P10 substitution

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RSD131P10 datasheet

 ..1. Size:454K  rohm
 rsd131p10.pdf pdf_icon

RSD131P10

RSD131P10 Pch 100V 13A Power MOSFET Datasheet lOutline VDSS -100V CPT3 (SC-63) RDS(on) (Max.) 200mW ID -13A (2) (1) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; ... See More ⇒

 0.1. Size:455K  rohm
 rsd131p10fra.pdf pdf_icon

RSD131P10

RSD131P10FRA Pch 100V 13A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS -100V CPT3 (SC-63) RDS(on) (Max.) 200mW ID -13A (2) (1) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) ... See More ⇒

Detailed specifications: RSD046P05, RSD046P05FRA, RSD050N06FRA, RSD050N06TL, RSD050N10FRA, RSD080N06FRA, RSD080P05FRA, RSD100N10FRA, IRFP250N, RSD131P10FRA, RSD140P06FRA, RSD150N06FRA, RSD160P05FRA, RSD175N10FRA, RSD200N10TL, RSD201N10, RSD201N10FRA

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