All MOSFET. RSD150N06FRA Datasheet

 

RSD150N06FRA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSD150N06FRA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SC-63

 RSD150N06FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSD150N06FRA Datasheet (PDF)

 ..1. Size:1006K  rohm
rsd150n06fra.pdf

RSD150N06FRA
RSD150N06FRA

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec

 5.1. Size:1164K  rohm
rsd150n06.pdf

RSD150N06FRA
RSD150N06FRA

Data Sheet4V Drive Nch MOSFET RSD150N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner ci

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