All MOSFET. RSD150N06FRA Datasheet

 

RSD150N06FRA Datasheet and Replacement


   Type Designator: RSD150N06FRA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SC-63
 

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RSD150N06FRA Datasheet (PDF)

 ..1. Size:1006K  rohm
 rsd150n06fra.pdf pdf_icon

RSD150N06FRA

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec

 5.1. Size:1164K  rohm
 rsd150n06.pdf pdf_icon

RSD150N06FRA

Data Sheet4V Drive Nch MOSFET RSD150N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner ci

Datasheet: RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , RSD140P06FRA , 2N7000 , RSD160P05FRA , RSD175N10FRA , RSD200N10TL , RSD201N10 , RSD201N10FRA , RSD221N06 , RSD221N06FRA , RSE002P03TL .

History: ELM5E402PA | PKE30BB | RSH070N05TB1 | DMP2004K | IRFSL3806 | RTR030P02TL | AM2359PE

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