RSD150N06FRA Specs and Replacement

Type Designator: RSD150N06FRA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SC-63

RSD150N06FRA substitution

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RSD150N06FRA datasheet

 ..1. Size:1006K  rohm
rsd150n06fra.pdf pdf_icon

RSD150N06FRA

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD150N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging spec... See More ⇒

 5.1. Size:1164K  rohm
rsd150n06.pdf pdf_icon

RSD150N06FRA

Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging specifications Inner ci... See More ⇒

Detailed specifications: RSD050N06TL, RSD050N10FRA, RSD080N06FRA, RSD080P05FRA, RSD100N10FRA, RSD131P10, RSD131P10FRA, RSD140P06FRA, AON7408, RSD160P05FRA, RSD175N10FRA, RSD200N10TL, RSD201N10, RSD201N10FRA, RSD221N06, RSD221N06FRA, RSE002P03TL

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