RSD160P05FRA Specs and Replacement

Type Designator: RSD160P05FRA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SC-63

RSD160P05FRA substitution

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RSD160P05FRA datasheet

 ..1. Size:1392K  rohm
 rsd160p05fra.pdf pdf_icon

RSD160P05FRA

Data Sheet AEC-Q101 Qualified 4V Drive Pch MOSFET RSD160P05 RSD160P05FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Pack... See More ⇒

 5.1. Size:1211K  rohm
 rsd160p05.pdf pdf_icon

RSD160P05FRA

Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner cir... See More ⇒

Detailed specifications: RSD050N10FRA, RSD080N06FRA, RSD080P05FRA, RSD100N10FRA, RSD131P10, RSD131P10FRA, RSD140P06FRA, RSD150N06FRA, 2SK3878, RSD175N10FRA, RSD200N10TL, RSD201N10, RSD201N10FRA, RSD221N06, RSD221N06FRA, RSE002P03TL, RSF010P03TL

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