All MOSFET. RSD160P05FRA Datasheet

 

RSD160P05FRA Datasheet and Replacement


   Type Designator: RSD160P05FRA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SC-63
 

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RSD160P05FRA Datasheet (PDF)

 ..1. Size:1392K  rohm
rsd160p05fra.pdf pdf_icon

RSD160P05FRA

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD160P05RSD160P05FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack

 5.1. Size:1211K  rohm
rsd160p05.pdf pdf_icon

RSD160P05FRA

Data Sheet4V Drive Pch MOSFET RSD160P05Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir

Datasheet: RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , RSD140P06FRA , RSD150N06FRA , IRFP260 , RSD175N10FRA , RSD200N10TL , RSD201N10 , RSD201N10FRA , RSD221N06 , RSD221N06FRA , RSE002P03TL , RSF010P03TL .

History: DMN5L06T-7 | P2610BT | DMN3035LWN | 2N7000RLRAG | HMS4030 | IPB34CN10N | FQD2N50TF

Keywords - RSD160P05FRA MOSFET datasheet

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