All MOSFET. RSD175N10FRA Datasheet

 

RSD175N10FRA Datasheet and Replacement


   Type Designator: RSD175N10FRA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SC-63
 

 RSD175N10FRA substitution

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RSD175N10FRA Datasheet (PDF)

 ..1. Size:1354K  rohm
 rsd175n10fra.pdf pdf_icon

RSD175N10FRA

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD175N10RSD175N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1

 5.1. Size:1159K  rohm
 rsd175n10.pdf pdf_icon

RSD175N10FRA

Data Sheet4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBas

Datasheet: RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , RSD140P06FRA , RSD150N06FRA , RSD160P05FRA , 12N60 , RSD200N10TL , RSD201N10 , RSD201N10FRA , RSD221N06 , RSD221N06FRA , RSE002P03TL , RSF010P03TL , RSF014N03TL .

History: AO6800 | SSF2300B | 2SK1007 | DH100P30B | RQ3E120GN | ME4542-G | HM60N04

Keywords - RSD175N10FRA MOSFET datasheet

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