RSD175N10FRA Specs and Replacement

Type Designator: RSD175N10FRA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SC-63

RSD175N10FRA substitution

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RSD175N10FRA datasheet

 ..1. Size:1354K  rohm
 rsd175n10fra.pdf pdf_icon

RSD175N10FRA

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD175N10 RSD175N10FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 ... See More ⇒

 5.1. Size:1159K  rohm
 rsd175n10.pdf pdf_icon

RSD175N10FRA

Data Sheet 4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Bas... See More ⇒

Detailed specifications: RSD080N06FRA, RSD080P05FRA, RSD100N10FRA, RSD131P10, RSD131P10FRA, RSD140P06FRA, RSD150N06FRA, RSD160P05FRA, STP75NF75, RSD200N10TL, RSD201N10, RSD201N10FRA, RSD221N06, RSD221N06FRA, RSE002P03TL, RSF010P03TL, RSF014N03TL

Keywords - RSD175N10FRA MOSFET specs

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