All MOSFET. RSD221N06 Datasheet

 

RSD221N06 Datasheet and Replacement


   Type Designator: RSD221N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SC-63
 

 RSD221N06 substitution

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RSD221N06 Datasheet (PDF)

 ..1. Size:366K  rohm
 rsd221n06.pdf pdf_icon

RSD221N06

RSD221N06 Nch 60V 22A Power MOSFET DatasheetlOutlineVDSS60V CPT3(SC-63)RDS(on) (Max.)26mW(3) ID22A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2 BODY DIODE 5) Pb-free

 0.1. Size:891K  rohm
 rsd221n06fra.pdf pdf_icon

RSD221N06

RSD221N06FRA Nch 60V 22A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS60V CPT3(SC-63)RDS(on) (Max.)26mW(3) ID22A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2

Datasheet: RSD131P10FRA , RSD140P06FRA , RSD150N06FRA , RSD160P05FRA , RSD175N10FRA , RSD200N10TL , RSD201N10 , RSD201N10FRA , 5N60 , RSD221N06FRA , RSE002P03TL , RSF010P03TL , RSF014N03TL , RSH065N03TB1 , RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 .

History: NP82N055KLE | SWP078R08ET

Keywords - RSD221N06 MOSFET datasheet

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