All MOSFET. RSH100N03TB1 Datasheet

 

RSH100N03TB1 Datasheet and Replacement


   Type Designator: RSH100N03TB1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0133 Ohm
   Package: SOP-8
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RSH100N03TB1 Datasheet (PDF)

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RSH100N03TB1

4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

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History: FRM244D | IPD144N06NG | KI2315BDS | GSM4936S | IRF7468TR | FTP08N06A | ATM2N65TE

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