RSH100N03TB1 MOSFET. Datasheet pdf. Equivalent
Type Designator: RSH100N03TB1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0133 Ohm
Package: SOP-8
RSH100N03TB1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSH100N03TB1 Datasheet (PDF)
..1. Size:166K rohm
rsh100n03tb1.pdf
rsh100n03tb1.pdf
4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
