All MOSFET. RSH100N03TB1 Datasheet

 

RSH100N03TB1 Datasheet and Replacement


   Type Designator: RSH100N03TB1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0133 Ohm
   Package: SOP-8
 

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RSH100N03TB1 Datasheet (PDF)

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RSH100N03TB1

4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

Datasheet: RSE002P03TL , RSF010P03TL , RSF014N03TL , RSH065N03TB1 , RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , 4N60 , RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P .

History: ZXMS6005DGQ | SSF2341E | STD35NF3LLT4 | IXTT140N10P | AFN3484 | 6N80L-TF1-T | UF830KG-TN3-R

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