RSH100N03TB1 Specs and Replacement

Type Designator: RSH100N03TB1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0133 Ohm

Package: SOP-8

RSH100N03TB1 substitution

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RSH100N03TB1 datasheet

 ..1. Size:166K  rohm
 rsh100n03tb1.pdf pdf_icon

RSH100N03TB1

4V Drive Nch MOSFET RSH100N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package ... See More ⇒

Detailed specifications: RSE002P03TL, RSF010P03TL, RSF014N03TL, RSH065N03TB1, RSH065N06TB1, RSH070N05TB1, RSH070P05TB1, RSH090N03TB1, 12N60, RSH110N03TB1, RSJ151P10, RSJ400N06FRA, RSJ400N10, RSL020P03FRA, RSL020P03TR, RSM002P03T2L, RSM5853P

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