RSJ151P10 Datasheet and Replacement
Type Designator: RSJ151P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SC-83
RSJ151P10 substitution
RSJ151P10 Datasheet (PDF)
rsj151p10.pdf

RSJ151P10 Pch 100V 15A Power MOSFET DatasheetlOutlineVDSS-100VLPTS(SC-83)RDS(on) (Max.)120mWID-15A(1) (2) PD50W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; RoHS compli
Datasheet: RSF014N03TL , RSH065N03TB1 , RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , RSH100N03TB1 , RSH110N03TB1 , IRF530 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P , RSQ015N06TR , RSQ020N03FRA .
History: 2N4222A | HGB080N10A | HM80N03I
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History: 2N4222A | HGB080N10A | HM80N03I



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