All MOSFET. RSJ151P10 Datasheet

 

RSJ151P10 Datasheet and Replacement


   Type Designator: RSJ151P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SC-83
 

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RSJ151P10 Datasheet (PDF)

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RSJ151P10

RSJ151P10 Pch 100V 15A Power MOSFET DatasheetlOutlineVDSS-100VLPTS(SC-83)RDS(on) (Max.)120mWID-15A(1) (2) PD50W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; RoHS compli

Datasheet: RSF014N03TL , RSH065N03TB1 , RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , RSH100N03TB1 , RSH110N03TB1 , IRF530 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P , RSQ015N06TR , RSQ020N03FRA .

History: BUK9510-55A | FDS7066N7 | HAT1047RJ | ME80N08AF-G | CEP21A2 | OSG65R099TT3ZF | IPD60R450E6

Keywords - RSJ151P10 MOSFET datasheet

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