All MOSFET. RSL020P03FRA Datasheet

 

RSL020P03FRA Datasheet and Replacement


   Type Designator: RSL020P03FRA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TUMT6
 

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RSL020P03FRA Datasheet (PDF)

 ..1. Size:939K  rohm
 rsl020p03fra.pdf pdf_icon

RSL020P03FRA

RSL020P03FRARSL020P03TransistorsAEC-Q101 Qualified4V Drive Pch MOSFETRSL020P03FRARSL020P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) High speed switching. ApplicationsAbbreviated symbol : SLSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code TRBasic ordering unit (pi

 5.1. Size:340K  rohm
 rsl020p03tr.pdf pdf_icon

RSL020P03FRA

RSL020P03 Transistors 4V Drive Pch MOS FET RSL020P03 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TUMT62.00.85Max. 1.30.770.65 0.65 Features (6) (5) (4)1) Low On-resistance. 0~0.12) High speed switching. (1) (2) (3) 0.170.3 ApplicationsAbbreviated symbol : SLSwitching Packaging specifications Inner circuit (6) (5) (4)P

Datasheet: RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , RSH100N03TB1 , RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , IRF530 , RSL020P03TR , RSM002P03T2L , RSM5853P , RSQ015N06TR , RSQ020N03FRA , RSQ020N03TR , RSQ025P03FRA , RSQ025P03TR .

History: AP9932GM | FDD9410-F085

Keywords - RSL020P03FRA MOSFET datasheet

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