RSL020P03FRA Specs and Replacement

Type Designator: RSL020P03FRA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TUMT6

RSL020P03FRA substitution

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RSL020P03FRA datasheet

 ..1. Size:939K  rohm
 rsl020p03fra.pdf pdf_icon

RSL020P03FRA

RSL020P03FRA RSL020P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSL020P03FRA RSL020P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) High speed switching. Applications Abbreviated symbol SL Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pi... See More ⇒

 5.1. Size:340K  rohm
 rsl020p03tr.pdf pdf_icon

RSL020P03FRA

RSL020P03 Transistors 4V Drive Pch MOS FET RSL020P03 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TUMT6 2.0 0.85Max. 1.3 0.77 0.65 0.65 Features (6) (5) (4) 1) Low On-resistance. 0 0.1 2) High speed switching. (1) (2) (3) 0.17 0.3 Applications Abbreviated symbol SL Switching Packaging specifications Inner circuit (6) (5) (4) P... See More ⇒

Detailed specifications: RSH070N05TB1, RSH070P05TB1, RSH090N03TB1, RSH100N03TB1, RSH110N03TB1, RSJ151P10, RSJ400N06FRA, RSJ400N10, IRF530, RSL020P03TR, RSM002P03T2L, RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR

Keywords - RSL020P03FRA MOSFET specs

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