RSM5853P Specs and Replacement
Type Designator: RSM5853P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: CF1206-8
RSM5853P substitution
- MOSFET ⓘ Cross-Reference Search
RSM5853P datasheet
rsm5853p.pdf
E L E C T R O N I C RSM5853P P-Channel 20Volt (D-S) MOSFET With Schottky Diode Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEW process to provide low RDS(on) and to provide low RDS(on) and to ensure A 1 8 K minimal power loss and heat dissipation. Typical applications are DC-DC A 2 7 K converters and power management in... See More ⇒
Detailed specifications: RSH100N03TB1, RSH110N03TB1, RSJ151P10, RSJ400N06FRA, RSJ400N10, RSL020P03FRA, RSL020P03TR, RSM002P03T2L, AON7506, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR, RSQ030P03TR, RSQ035N03FRA, RSQ035N03TR
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