All MOSFET. RSM5853P Datasheet

 

RSM5853P Datasheet and Replacement


   Type Designator: RSM5853P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: CF1206-8
 

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RSM5853P Datasheet (PDF)

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RSM5853P

E L E C T R O N I C RSM5853PP-Channel 20Volt (D-S) MOSFET With Schottky Diode Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEWprocess to provide low RDS(on) and to provide low RDS(on) and to ensure A 1 8 Kminimal power loss and heat dissipation. Typical applications are DC-DC A 2 7 Kconverters and power management in

Datasheet: RSH100N03TB1 , RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , IRFP250 , RSQ015N06TR , RSQ020N03FRA , RSQ020N03TR , RSQ025P03FRA , RSQ025P03TR , RSQ030P03TR , RSQ035N03FRA , RSQ035N03TR .

History: NCE65NF068LL | SSF1530 | AOB11C60 | CTD06N7P5 | CS10N80FA9D | IXTH3N100P | FQD1N50TM

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