RSR015P03TL Datasheet and Replacement
Type Designator: RSR015P03TL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.235 Ohm
Package: TSMT3
RSR015P03TL substitution
RSR015P03TL Datasheet (PDF)
rsr010n10.pdf

Data Sheet4V Drive Nch MOSFET RSR010N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features (3)1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2)3) Small Surface Mount Package (TSMT3).Abbreviated symbol : ZJ ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering
rsr010n10fha.pdf

RSR010N10FHA Nch 100V 1A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 100V(3) RDS(on) (Max.)520mW(1) ID1.0APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BO
Datasheet: RSQ030P03TR , RSQ035N03FRA , RSQ035N03TR , RSQ035P03FRA , RSQ035P03TR , RSQ045N03FRA , RSQ045N03TR , RSR010N10FHA , 4N60 , RSR020N06TL , RSR020P03 , RSR020P03TL , RSR020P05 , RSR020P05FRA , RSR025N03FRA , RSR025N03TL , RSR025N05FRA .
History: AP55T10GR | KIA50N03-252 | NDP606B | GSM9997 | AP6N8R2LMT | GSM9995S | UTT25P10
Keywords - RSR015P03TL MOSFET datasheet
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History: AP55T10GR | KIA50N03-252 | NDP606B | GSM9997 | AP6N8R2LMT | GSM9995S | UTT25P10



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