RSS085N05 MOSFET. Datasheet pdf. Equivalent
Type Designator: RSS085N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.3 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP-8
RSS085N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSS085N05 Datasheet (PDF)
rss085n05.pdf
RSS085N05 Transistor 4V Drive Nch MOS FET RSS085N05 Structure External dimensions (Unit : mm) Silicon N-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter, Inverter Packaging
crst085n15n crss082n15n.pdf
CRST085N15N, CRSS082N15N() SkyMOS1 N-MOSFET 150V, 7m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 150V Extremely low on-resistance RDS(on) RDS(on)7m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
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