All MOSFET. RSS085N05 Datasheet

 

RSS085N05 Datasheet and Replacement


   Type Designator: RSS085N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8
 

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RSS085N05 Datasheet (PDF)

 ..1. Size:119K  rohm
 rss085n05.pdf pdf_icon

RSS085N05

RSS085N05 Transistor 4V Drive Nch MOS FET RSS085N05 Structure External dimensions (Unit : mm) Silicon N-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter, Inverter Packaging

 9.1. Size:563K  crhj
 crst085n15n crss082n15n.pdf pdf_icon

RSS085N05

CRST085N15N, CRSS082N15N() SkyMOS1 N-MOSFET 150V, 7m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 150V Extremely low on-resistance RDS(on) RDS(on)7m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100

Datasheet: RSS060P05FRA , RSS065N03FU6TB , RSS065N03TB , RSS065N06FU6TB , RSS070N05 , RSS070P05 , RSS075P03FU6TB , RSS075P03TB , MMD60R360PRH , RSS090N03FU6TB , RSS090P03FU6TB , RSS090P03TB , RSS095N05 , RSS100N03FU6TB , RSS100N03TB , RSS105N03FU6TB , RSS105N03TB .

History: AP02N60H | SI2301-TP | SI4412ADY | NCE65N290I | AP9974GP | ELM13434CA | 2SK2080-01

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