RSY200N05TL Specs and Replacement
Type Designator: RSY200N05TL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TCPT3
RSY200N05TL substitution
- MOSFET ⓘ Cross-Reference Search
RSY200N05TL datasheet
rsy200n05tl.pdf
RSY200N05 MOSFETs Transistors Discrete Semiconductors ROHM CO., LTD. Page 1 of 1 Site Search Site Map 6 HOME, Products > Discrete Semiconductors > Transistors > MOSFETs > RSY200N05 ICs Transistors 4V Drive Nch MOSFET Discrete 2010.07.21 RSY200N05 Semiconductors The industry's highest efficiency MOSFETs for Transistors DC/DC power supplies Design Model SPICE Data... See More ⇒
Detailed specifications: RSS120N03FU6TB, RSS120N03TB, RSS125N03FU6TB, RSS125N03TB, RSS130N03FU6TB, RSS130N03TB, RSS140N03TB, RSU002P03T106, IRF1404, RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M, RT3K22M
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
