All MOSFET. RSY200N05TL Datasheet

 

RSY200N05TL Datasheet and Replacement


   Type Designator: RSY200N05TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TCPT3
 

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RSY200N05TL Datasheet (PDF)

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RSY200N05TL

RSY200N05 | MOSFETs | Transistors | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1Site Search Site Map6 HOME, Products > Discrete Semiconductors > Transistors > MOSFETs > RSY200N05 ICs Transistors4V Drive Nch MOSFET Discrete 2010.07.21 RSY200N05 Semiconductors The industry's highest efficiency MOSFETs for Transistors DC/DC power supplies: Design Model SPICE Data

Datasheet: RSS120N03FU6TB , RSS120N03TB , RSS125N03FU6TB , RSS125N03TB , RSS130N03FU6TB , RSS130N03TB , RSS140N03TB , RSU002P03T106 , IRF1404 , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M , RT3J33M , RT3J55M , RT3K11M , RT3K22M .

History: 2SK1404 | NX3008NBKW | IRFS9231 | HGP080N10SL | PM5Q2EA | PKCD0BB | CSD19534Q5A

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