All MOSFET. RT3J55M Datasheet

 

RT3J55M Datasheet and Replacement


   Type Designator: RT3J55M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: SC-88
 

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RT3J55M Datasheet (PDF)

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RT3J55M

RT3J55MComposite Transistor For high speed switchingSilicon P-channel MOSFETDESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX OUTLINE DRAWING Unitmm chips in SC-88 package. 2.1FEATURE 0.425 1.25 0.425Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -4V Low on Resistance.

Datasheet: RSS140N03TB , RSU002P03T106 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M , RT3J33M , AON6414A , RT3K11M , RT3K22M , RT3K33M , RT3K44M , RT3K66M , RT3U11M , RT3U22M , RT3U33M .

History: RT3J11M

Keywords - RT3J55M MOSFET datasheet

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