RT3J55M Specs and Replacement

Type Designator: RT3J55M

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: SC-88

RT3J55M substitution

- MOSFET ⓘ Cross-Reference Search

 

RT3J55M datasheet

 ..1. Size:145K  isahaya
 rt3j55m.pdf pdf_icon

RT3J55M

RT3J55M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX OUTLINE DRAWING Unit mm chips in SC-88 package. 2.1 FEATURE 0.425 1.25 0.425 Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -4V Low on Resistance.... See More ⇒

Detailed specifications: RSS140N03TB, RSU002P03T106, RSY200N05TL, RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, IRFB4227, RT3K11M, RT3K22M, RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M

Keywords - RT3J55M MOSFET specs

 RT3J55M cross reference

 RT3J55M equivalent finder

 RT3J55M pdf lookup

 RT3J55M substitution

 RT3J55M replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs