All MOSFET. RT3J55M Datasheet

 

RT3J55M Datasheet and Replacement


   Type Designator: RT3J55M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: SC-88
 

 RT3J55M substitution

   - MOSFET ⓘ Cross-Reference Search

 

RT3J55M Datasheet (PDF)

 ..1. Size:145K  isahaya
 rt3j55m.pdf pdf_icon

RT3J55M

RT3J55MComposite Transistor For high speed switchingSilicon P-channel MOSFETDESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX OUTLINE DRAWING Unitmm chips in SC-88 package. 2.1FEATURE 0.425 1.25 0.425Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -4V Low on Resistance.

Datasheet: RSS140N03TB , RSU002P03T106 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M , RT3J33M , IRF3710 , RT3K11M , RT3K22M , RT3K33M , RT3K44M , RT3K66M , RT3U11M , RT3U22M , RT3U33M .

History: RT3J33M | ME7810S-G | MTB1D7N03E3 | ME78101S-G | 2SK2952 | TK12A65D | 2SK2955

Keywords - RT3J55M MOSFET datasheet

 RT3J55M cross reference
 RT3J55M equivalent finder
 RT3J55M lookup
 RT3J55M substitution
 RT3J55M replacement

 

 
Back to Top

 


 
.