RT3K11M Specs and Replacement

Type Designator: RT3K11M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SC-88

RT3K11M substitution

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RT3K11M datasheet

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 rt3k11m.pdf pdf_icon

RT3K11M

RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth... See More ⇒

Detailed specifications: RSU002P03T106, RSY200N05TL, RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, RT3J55M, IRF3710, RT3K22M, RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL

Keywords - RT3K11M MOSFET specs

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