All MOSFET. RT3K11M Datasheet

 

RT3K11M MOSFET. Datasheet pdf. Equivalent


   Type Designator: RT3K11M
   Marking Code: K11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SC-88

 RT3K11M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RT3K11M Datasheet (PDF)

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 rt3k11m.pdf

RT3K11M RT3K11M

RT3K11MComposite Transistor For high speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING Unitmm RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RU20T8M7 | 2N6966JANTX | 2N7002E | APT1002R4AN

 

 
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