All MOSFET. RT3K66M Datasheet

 

RT3K66M MOSFET. Datasheet pdf. Equivalent


   Type Designator: RT3K66M
   Marking Code: K66
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SC-88

 RT3K66M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RT3K66M Datasheet (PDF)

 ..1. Size:143K  isahaya
 rt3k66m.pdf

RT3K66M RT3K66M

RT3K66MComposite Transistor For high speed switchingSilicon N-channel MOSFETDESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unitmm chips in SC-88 package. 2.1FEATURE 0.425 1.25 0.425Input impedance is high, and not necessary to consider a drive electric current. Drive voltage 4V Low on Resistance.

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N60G-TND-R | STP32N06L | STP85NF55L | FHF2N60A

 

 
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