All MOSFET. RT3K66M Datasheet

 

RT3K66M Datasheet and Replacement


   Type Designator: RT3K66M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SC-88
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RT3K66M Datasheet (PDF)

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RT3K66M

RT3K66MComposite Transistor For high speed switchingSilicon N-channel MOSFETDESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unitmm chips in SC-88 package. 2.1FEATURE 0.425 1.25 0.425Input impedance is high, and not necessary to consider a drive electric current. Drive voltage 4V Low on Resistance.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | DMP2104LP | DMN60H3D5SK3 | IRFBG20

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