All MOSFET. RT3K66M Datasheet

 

RT3K66M Datasheet and Replacement


   Type Designator: RT3K66M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SC-88
 

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RT3K66M Datasheet (PDF)

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RT3K66M

RT3K66MComposite Transistor For high speed switchingSilicon N-channel MOSFETDESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unitmm chips in SC-88 package. 2.1FEATURE 0.425 1.25 0.425Input impedance is high, and not necessary to consider a drive electric current. Drive voltage 4V Low on Resistance.

Datasheet: RT3J11M , RT3J22M , RT3J33M , RT3J55M , RT3K11M , RT3K22M , RT3K33M , RT3K44M , IRF9540 , RT3U11M , RT3U22M , RT3U33M , RTE002P02TL , RTF010P02 , RTF010P02TL , RTF015N03TL , RTF015P02TL .

History: BRCS18N20DP

Keywords - RT3K66M MOSFET datasheet

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