RT3K66M Specs and Replacement

Type Designator: RT3K66M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: SC-88

RT3K66M substitution

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RT3K66M datasheet

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RT3K66M

RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unit mm chips in SC-88 package. 2.1 FEATURE 0.425 1.25 0.425 Input impedance is high, and not necessary to consider a drive electric current. Drive voltage 4V Low on Resistance. ... See More ⇒

Detailed specifications: RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M, RT3K22M, RT3K33M, RT3K44M, 2N7000, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, RTF010P02TL, RTF015N03TL, RTF015P02TL

Keywords - RT3K66M MOSFET specs

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