All MOSFET. RT3U11M Datasheet

 

RT3U11M Datasheet and Replacement


   Type Designator: RT3U11M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SC-88
 

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RT3U11M Datasheet (PDF)

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RT3U11M

PRELIMINARY RT3U11MComposite Transistor For high speed switchingSilicon N-channel + P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unitmm RT3U11M is a composite transistor built withINK0001AX and INJ0001AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive

Datasheet: RT3J22M , RT3J33M , RT3J55M , RT3K11M , RT3K22M , RT3K33M , RT3K44M , RT3K66M , IRFB4115 , RT3U22M , RT3U33M , RTE002P02TL , RTF010P02 , RTF010P02TL , RTF015N03TL , RTF015P02TL , RTF020P02 .

History: HCP65R210 | PKE94BB | PG2910BD | HCP90R300 | PM5Q2EA | PKCD0BB | PI517BZ

Keywords - RT3U11M MOSFET datasheet

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