RTE002P02TL Specs and Replacement

Type Designator: RTE002P02TL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: EMT3

RTE002P02TL substitution

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RTE002P02TL datasheet

 ..1. Size:52K  rohm
 rte002p02tl.pdf pdf_icon

RTE002P02TL

RTE002P02 Transistors 2.5V Drive Pch MOS FET RTE002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 2.5V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol TW Switching Package specifications... See More ⇒

 5.1. Size:54K  rohm
 rte002p02.pdf pdf_icon

RTE002P02TL

RTE002P02 Transistors 2.5V Drive Pch MOS FET RTE002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 2.5V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol TW Switching Package specifications... See More ⇒

Detailed specifications: RT3K11M, RT3K22M, RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M, IRFP250N, RTF010P02, RTF010P02TL, RTF015N03TL, RTF015P02TL, RTF020P02, RTF020P02TL, RTF025N03FRA, RTF025N03TL

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