All MOSFET. RTM002P02T2L Datasheet

 

RTM002P02T2L Datasheet and Replacement


   Type Designator: RTM002P02T2L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: VMT3
 

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RTM002P02T2L Datasheet (PDF)

 ..1. Size:73K  rohm
 rtm002p02t2l.pdf pdf_icon

RTM002P02T2L

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

 5.1. Size:75K  rohm
 rtm002p02.pdf pdf_icon

RTM002P02T2L

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

Datasheet: RTF020P02TL , RTF025N03FRA , RTF025N03TL , RTL020P02FRA , RTL020P02TR , RTL030P02TR , RTL035N03FRA , RTL035N03TR , AON7410 , RTP315N10F7 , RTQ020N03FRA , RTQ020N03TR , RTQ020N05TR , RTQ025P02FRA , RTQ025P02TR , RTQ030P02TR , RTQ035N03FRA .

History: F5020-S | SPU07N60C3

Keywords - RTM002P02T2L MOSFET datasheet

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