All MOSFET. RTM002P02T2L Datasheet

 

RTM002P02T2L MOSFET. Datasheet pdf. Equivalent


   Type Designator: RTM002P02T2L
   Marking Code: TW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: VMT3

 RTM002P02T2L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RTM002P02T2L Datasheet (PDF)

 ..1. Size:73K  rohm
 rtm002p02t2l.pdf

RTM002P02T2L RTM002P02T2L

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

 5.1. Size:75K  rohm
 rtm002p02.pdf

RTM002P02T2L RTM002P02T2L

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SJ473-01S | AP9561GP-HF | MSF9N90 | SL2300 | LSGG08R060W3 | MCB160N10Y | FC6B21100L

 

 
Back to Top