RTP315N10F7 Specs and Replacement

Type Designator: RTP315N10F7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 315 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 108 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO-220

RTP315N10F7 substitution

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RTP315N10F7 datasheet

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RTP315N10F7

RTP315N10F7 Aerospace and defense N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - target specification Features VDS RDS(on) max. ID Order code TAB RTP315N10F7 100 V 2.7 m 180 A Intended for use in aerospace and defense applications 3 2 Dedicated traceability and part marking 1 Production parts approval documents av... See More ⇒

Detailed specifications: RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR, RTL030P02TR, RTL035N03FRA, RTL035N03TR, RTM002P02T2L, SKD502T, RTQ020N03FRA, RTQ020N03TR, RTQ020N05TR, RTQ025P02FRA, RTQ025P02TR, RTQ030P02TR, RTQ035N03FRA, RTQ035N03TR

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs