RTU002P02T106 Specs and Replacement
Type Designator: RTU002P02T106
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: UMT3
RTU002P02T106 substitution
- MOSFET ⓘ Cross-Reference Search
RTU002P02T106 datasheet
rtu002p02t106.pdf
RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol TW (3) Drain Packa... See More ⇒
rtu002p02.pdf
RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol TW (3) Drain Packa... See More ⇒
Detailed specifications: RTR025P02TL, RTR030N05FRA, RTR030N05TL, RTR030P02, RTR030P02FHA, RTR030P02TL, RTR040N03FRA, RTR040N03TL, 2N60, RV1C001ZP, RV1C002UN, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR
Keywords - RTU002P02T106 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STW43NM60ND | JCS24N50ABH
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