All MOSFET. RTU002P02T106 Datasheet

 

RTU002P02T106 Datasheet and Replacement


   Type Designator: RTU002P02T106
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: UMT3
 

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RTU002P02T106 Datasheet (PDF)

 ..1. Size:52K  rohm
 rtu002p02t106.pdf pdf_icon

RTU002P02T106

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

 5.1. Size:48K  rohm
 rtu002p02.pdf pdf_icon

RTU002P02T106

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

Datasheet: RTR025P02TL , RTR030N05FRA , RTR030N05TL , RTR030P02 , RTR030P02FHA , RTR030P02TL , RTR040N03FRA , RTR040N03TL , IRF830 , RV1C001ZP , RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP , RV3C002UN , RVQ040N05TR .

History: WMB150N03TS | AUIRLR024Z | DMN2300UFB4 | RTR030N05FRA | KMB6D0NP40QA | AON6244 | RFH35N08

Keywords - RTU002P02T106 MOSFET datasheet

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