All MOSFET. RTU002P02T106 Datasheet

 

RTU002P02T106 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RTU002P02T106
   Marking Code: TW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: UMT3

 RTU002P02T106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RTU002P02T106 Datasheet (PDF)

 ..1. Size:52K  rohm
 rtu002p02t106.pdf

RTU002P02T106 RTU002P02T106

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

 5.1. Size:48K  rohm
 rtu002p02.pdf

RTU002P02T106 RTU002P02T106

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top