RV1C001ZP PDF and Equivalents Search

 

RV1C001ZP Specs and Replacement

Type Designator: RV1C001ZP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: VML0806

RV1C001ZP substitution

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RV1C001ZP datasheet

 ..1. Size:433K  rohm
 rv1c001zp.pdf pdf_icon

RV1C001ZP

RV1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline (3) VDSS -20V VML0806 RDS(on) (Max.) 3.8W ID -100mA (1) PD 100mW (2) lFeatures lInner circuit 1) Ultra small Package (0806size). (1) Gate 2) Low voltage drive(-1.2V) makes this (2) Source device ideal for partable equipment. (3) Drain 3) Drive circuits can be simple. *1 BODY DIODE 4) Built-in ESD P... See More ⇒

 8.1. Size:438K  rohm
 rv1c002un.pdf pdf_icon

RV1C001ZP

RV1C002UN Nch 20V 150mA Small Signal MOSFET Datasheet lOutline (3) VDSS 20V VML0806 RDS(on) (Max.) 2.0W ID 150mA (1) PD 100mW (2) lFeatures lInner circuit 1) Ultra small Package (0806size). (1) Gate 2) Low voltage drive(1.2V) makes this (2) Source device ideal for partable equipment. (3) Drain 3) Drive circuits can be simple. *1 BODY DIODE 4) Built-in ESD Protec... See More ⇒

Detailed specifications: RTR030N05FRA, RTR030N05TL, RTR030P02, RTR030P02FHA, RTR030P02TL, RTR040N03FRA, RTR040N03TL, RTU002P02T106, 8N60, RV1C002UN, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR, RW1C026ZP

Keywords - RV1C001ZP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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