All MOSFET. RV1C001ZP Datasheet

 

RV1C001ZP Datasheet and Replacement


   Type Designator: RV1C001ZP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: VML0806
 

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RV1C001ZP Datasheet (PDF)

 ..1. Size:433K  rohm
 rv1c001zp.pdf pdf_icon

RV1C001ZP

RV1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutline(3) VDSS-20VVML0806RDS(on) (Max.)3.8WID-100mA(1) PD100mW(2) lFeatures lInner circuit1) Ultra small Package (0806size).(1) Gate 2) Low voltage drive(-1.2V) makes this(2) Source device ideal for partable equipment.(3) Drain 3) Drive circuits can be simple.*1 BODY DIODE 4) Built-in ESD P

 8.1. Size:438K  rohm
 rv1c002un.pdf pdf_icon

RV1C001ZP

RV1C002UN Nch 20V 150mA Small Signal MOSFET DatasheetlOutline(3) VDSS20VVML0806RDS(on) (Max.)2.0WID150mA(1) PD100mW(2) lFeatures lInner circuit1) Ultra small Package (0806size).(1) Gate 2) Low voltage drive(1.2V) makes this(2) Source device ideal for partable equipment.(3) Drain 3) Drive circuits can be simple.*1 BODY DIODE 4) Built-in ESD Protec

Datasheet: RTR030N05FRA , RTR030N05TL , RTR030P02 , RTR030P02FHA , RTR030P02TL , RTR040N03FRA , RTR040N03TL , RTU002P02T106 , K2611 , RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP .

History: HCS60R150ST | PKCD0BB | OSG65R125PF | TSG12N10AT | DMP2066LSS | RT3J55M | RT3K33M

Keywords - RV1C001ZP MOSFET datasheet

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