RV1C002UN Specs and Replacement
Type Designator: RV1C002UN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: VML0806
RV1C002UN substitution
- MOSFET ⓘ Cross-Reference Search
RV1C002UN datasheet
rv1c002un.pdf
RV1C002UN Nch 20V 150mA Small Signal MOSFET Datasheet lOutline (3) VDSS 20V VML0806 RDS(on) (Max.) 2.0W ID 150mA (1) PD 100mW (2) lFeatures lInner circuit 1) Ultra small Package (0806size). (1) Gate 2) Low voltage drive(1.2V) makes this (2) Source device ideal for partable equipment. (3) Drain 3) Drive circuits can be simple. *1 BODY DIODE 4) Built-in ESD Protec... See More ⇒
rv1c001zp.pdf
RV1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline (3) VDSS -20V VML0806 RDS(on) (Max.) 3.8W ID -100mA (1) PD 100mW (2) lFeatures lInner circuit 1) Ultra small Package (0806size). (1) Gate 2) Low voltage drive(-1.2V) makes this (2) Source device ideal for partable equipment. (3) Drain 3) Drive circuits can be simple. *1 BODY DIODE 4) Built-in ESD P... See More ⇒
Detailed specifications: RTR030N05TL, RTR030P02, RTR030P02FHA, RTR030P02TL, RTR040N03FRA, RTR040N03TL, RTU002P02T106, RV1C001ZP, P60NF06, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR, RW1C026ZP, RZE002P02TL
Keywords - RV1C002UN MOSFET specs
RV1C002UN cross reference
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RV1C002UN replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: S68N08S | RV2C001ZP | SUD50N04-8M8P | M7002NND03 | HX3415A | EMB22A04G | RV2C010UN
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