All MOSFET. RV3C001ZP Datasheet

 

RV3C001ZP Datasheet and Replacement


   Type Designator: RV3C001ZP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: VML0604
 

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RV3C001ZP Datasheet (PDF)

 ..1. Size:633K  rohm
 rv3c001zp.pdf pdf_icon

RV3C001ZP

TENTATIVERV3C001ZP Pch -20V -100mA Small Signal MOSFET Data SheetlOutlineVDSS-20V VML0604RDS(on) (Max.)3.8WID-100mAPD100mWlInner circuitlFeatures(1) Gate 1) Ultra Small Package (0.60.40.36mm) (2) Source 2) Low voltage drive (-1.2V) makes this (3) Drain device ideal for partable equipment.*1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can

 8.1. Size:589K  rohm
 rv3c002un.pdf pdf_icon

RV3C001ZP

TENTATIVERV3C002UN Nch 20V 150mA Small Signal MOSFET Data SheetlOutlineVDSS20V VML0604RDS(on) (Max.)2.0WID150mAPD100mWlInner circuitlFeatures(1) Gate 1) Ultra Small Package (0.60.40.36mm) (2) Source 2) Low voltage drive (1.2V) makes this(3) Drain device ideal for partable equipment.*1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can be s

Datasheet: RTR040N03FRA , RTR040N03TL , RTU002P02T106 , RV1C001ZP , RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , IRFZ48N , RV3C002UN , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 .

History: HTM040N03P | BUK9610-55A | OSG65R290KF | RTL030P02TR | HCP65R130 | CEB6056 | IXFE48N50Q

Keywords - RV3C001ZP MOSFET datasheet

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