RZE002P02TL Datasheet and Replacement
Type Designator: RZE002P02TL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: EMT3
RZE002P02TL substitution
RZE002P02TL Datasheet (PDF)
rze002p02tl.pdf

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.7 Features 0.550.31) High speed switching. ( )32) Small package (EMT3). 3) 1.2V drive. ( ) ( )2 10.2 0.20.150.5 0.51.0 Applications (1)SourceSwitching (2)Gate(3)Drain Abbreviated symbol : YK Package specifications Inner circuit Package Taping(3
rze002p02.pdf

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.7 Features 0.550.31) High speed switching. ( )32) Small package (EMT3). 3) 1.2V drive. ( ) ( )2 10.2 0.20.150.5 0.51.0 Applications (1)SourceSwitching (2)Gate(3)Drain Abbreviated symbol : YK Package specifications Inner circuit Package Taping(3
Datasheet: RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP , RU7088R , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G .
History: STLT19FI
Keywords - RZE002P02TL MOSFET datasheet
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History: STLT19FI



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