RZE002P02TL PDF and Equivalents Search

 

RZE002P02TL Specs and Replacement

Type Designator: RZE002P02TL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: EMT3

RZE002P02TL substitution

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RZE002P02TL datasheet

 ..1. Size:218K  rohm
 rze002p02tl.pdf pdf_icon

RZE002P02TL

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 Features 0.55 0.3 1) High speed switching. ( ) 3 2) Small package (EMT3). 3) 1.2V drive. ( ) ( ) 2 1 0.2 0.2 0.15 0.5 0.5 1.0 Applications (1)Source Switching (2)Gate (3)Drain Abbreviated symbol YK Package specifications Inner circuit Package Taping (3... See More ⇒

 5.1. Size:219K  rohm
 rze002p02.pdf pdf_icon

RZE002P02TL

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 Features 0.55 0.3 1) High speed switching. ( ) 3 2) Small package (EMT3). 3) 1.2V drive. ( ) ( ) 2 1 0.2 0.2 0.15 0.5 0.5 1.0 Applications (1)Source Switching (2)Gate (3)Drain Abbreviated symbol YK Package specifications Inner circuit Package Taping (3... See More ⇒

Detailed specifications: RV1C002UN, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR, RW1C026ZP, IRFZ46N, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL, S2N7002DM, SBSS84LT1G

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