All MOSFET. RZE002P02TL Datasheet

 

RZE002P02TL Datasheet and Replacement


   Type Designator: RZE002P02TL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: EMT3
 

 RZE002P02TL substitution

   - MOSFET ⓘ Cross-Reference Search

 

RZE002P02TL Datasheet (PDF)

 ..1. Size:218K  rohm
 rze002p02tl.pdf pdf_icon

RZE002P02TL

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.7 Features 0.550.31) High speed switching. ( )32) Small package (EMT3). 3) 1.2V drive. ( ) ( )2 10.2 0.20.150.5 0.51.0 Applications (1)SourceSwitching (2)Gate(3)Drain Abbreviated symbol : YK Package specifications Inner circuit Package Taping(3

 5.1. Size:219K  rohm
 rze002p02.pdf pdf_icon

RZE002P02TL

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.7 Features 0.550.31) High speed switching. ( )32) Small package (EMT3). 3) 1.2V drive. ( ) ( )2 10.2 0.20.150.5 0.51.0 Applications (1)SourceSwitching (2)Gate(3)Drain Abbreviated symbol : YK Package specifications Inner circuit Package Taping(3

Datasheet: RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP , STP65NF06 , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G .

History: WFF640 | FDS7066N7 | IPD096N08N3G | AON6234 | LSD60R650HT | 2SK2159 | HGB080N10A

Keywords - RZE002P02TL MOSFET datasheet

 RZE002P02TL cross reference
 RZE002P02TL equivalent finder
 RZE002P02TL lookup
 RZE002P02TL substitution
 RZE002P02TL replacement

 

 
Back to Top

 


 
.