RZL025P01TR PDF and Equivalents Search

 

RZL025P01TR Specs and Replacement

Type Designator: RZL025P01TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm

Package: TUMT6

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RZL025P01TR datasheet

 ..1. Size:203K  rohm
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RZL025P01TR

RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol YC Application Switching Packaging specifications Equivalent circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces... See More ⇒

Detailed specifications: RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR, RW1C026ZP, RZE002P02TL, RZF020P01TL, IRLB3034, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL, S2N7002DM, SBSS84LT1G, SC3018, SCH1301

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