All MOSFET. RZL025P01TR Datasheet

 

RZL025P01TR Datasheet and Replacement


   Type Designator: RZL025P01TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TUMT6
 

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RZL025P01TR Datasheet (PDF)

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RZL025P01TR

RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YC Application Switching Packaging specifications Equivalent circuit Package Taping(6) (5) (4)Type Code TRBasic ordering unit (pieces

Datasheet: RV2C002UN , RV2C010UN , RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , 60N06 , RZL035P01TR , RZM001P02 , RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 .

History: BUK9635-55A | MEE4292P-G | UTD452 | UF830L-TF2-T | TMP20N65H | S2N7002DM | DH100P25B

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