All MOSFET. RZM001P02 Datasheet

 

RZM001P02 Datasheet and Replacement


   Type Designator: RZM001P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: VMT3
 

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RZM001P02 Datasheet (PDF)

 ..1. Size:397K  rohm
 rzm001p02.pdf pdf_icon

RZM001P02

RZM001P02 Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) VMT3RDS(on) (Max.)3.8W(1) ID-100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIOD

 9.1. Size:218K  rohm
 rzm002p02.pdf pdf_icon

RZM001P02

1.2V Drive Pch MOSFET RZM002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) High Speed Switching. 2) Small package (VMT3). (1)(2)0.220.133) Ultra Low Voltage drive. (1.2V drive) 0.4 0.4 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : YK Applications Inner circuit Switching (3) Packaging specifications

 9.2. Size:1872K  cn tech public
 przm002p02t2l.pdf pdf_icon

RZM001P02

Datasheet: RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , 8N60 , RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 .

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