RZM001P02 MOSFET Datasheet: P-Ch, 20V, 0.1A. Full specification with pinout and replacement list

RZM001P02 Specs and Replacement

Type Designator: RZM001P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: VMT3

RZM001P02 substitution

- MOSFET ⓘ Cross-Reference Search

RZM001P02 datasheet

..1. Size:397K rohm
rzm001p02.pdf pdf_icon

RZM001P02 Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) VMT3 RDS(on) (Max.) 3.8W (1) ID -100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIOD... See More ⇒

9.1. Size:218K rohm
rzm002p02.pdf pdf_icon

1.2V Drive Pch MOSFET RZM002P02 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) High Speed Switching. 2) Small package (VMT3). (1)(2) 0.22 0.13 3) Ultra Low Voltage drive. (1.2V drive) 0.4 0.4 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol YK Applications Inner circuit Switching (3) Packaging specifications ... See More ⇒

9.2. Size:1872K cn tech public
przm002p02t2l.pdf pdf_icon