RZQ045P01TR PDF and Equivalents Search

 

RZQ045P01TR Specs and Replacement

Type Designator: RZQ045P01TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TSMT6

RZQ045P01TR substitution

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RZQ045P01TR datasheet

 ..1. Size:171K  rohm
 rzq045p01tr.pdf pdf_icon

RZQ045P01TR

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) High power package. 0 0.1 3) Low voltage drive. (1.5V) (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol YG Switchin... See More ⇒

 5.1. Size:174K  rohm
 rzq045p01.pdf pdf_icon

RZQ045P01TR

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) High power package. 0 0.1 3) Low voltage drive. (1.5V) (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol YG Switchin... See More ⇒

Detailed specifications: RV3C002UN, RVQ040N05TR, RW1C026ZP, RZE002P02TL, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, AON7403, RZY200P01TL, S2N7002DM, SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, SCH2825

Keywords - RZQ045P01TR MOSFET specs

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