All MOSFET. RZQ045P01TR Datasheet

 

RZQ045P01TR Datasheet and Replacement


   Type Designator: RZQ045P01TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TSMT6
 

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RZQ045P01TR Datasheet (PDF)

 ..1. Size:171K  rohm
 rzq045p01tr.pdf pdf_icon

RZQ045P01TR

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low on-resistance. 2) High power package. 0~0.13) Low voltage drive. (1.5V) (1) (2) (3)1pin mark0.160.4Each lead has same dimensions Applications Abbreviated symbol : YGSwitchin

 5.1. Size:174K  rohm
 rzq045p01.pdf pdf_icon

RZQ045P01TR

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low on-resistance. 2) High power package. 0~0.13) Low voltage drive. (1.5V) (1) (2) (3)1pin mark0.160.4Each lead has same dimensions Applications Abbreviated symbol : YGSwitchin

Datasheet: RV3C002UN , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , EMB04N03H , RZY200P01TL , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 .

History: TTB105N06A | RTR040N03FRA | CEB1195 | PT4407 | PM5Q2EA | PKCD0BB | RT3J55M

Keywords - RZQ045P01TR MOSFET datasheet

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