All MOSFET. RZY200P01TL Datasheet

 

RZY200P01TL Datasheet and Replacement


   Type Designator: RZY200P01TL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TCPT3
 

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RZY200P01TL Datasheet (PDF)

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RZY200P01TL

RZY200P01 | MOSFETs | Transistors | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1Site Search Site Map6 HOME, Products > Discrete Semiconductors > Transistors > MOSFETs > RZY200P01 ICs Transistors1.5V Drive Pch MOSFET Discrete 2010.07.21 RZY200P01 NEW Semiconductors The industry's highest efficiency MOSFETs for Transistors DC/DC power supplies: Design Model Data

Datasheet: RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , RZQ045P01TR , IRF9640 , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP .

History: IPD088N06N3G | 2N65F | HTM040N03P | RV3C001ZP | 2SK4201-S19-AY | BUK9505-30A | CEB6056

Keywords - RZY200P01TL MOSFET datasheet

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