RZY200P01TL Specs and Replacement
Type Designator: RZY200P01TL
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TCPT3
RZY200P01TL substitution
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RZY200P01TL datasheet
rzy200p01tl.pdf
RZY200P01 MOSFETs Transistors Discrete Semiconductors ROHM CO., LTD. Page 1 of 1 Site Search Site Map 6 HOME, Products > Discrete Semiconductors > Transistors > MOSFETs > RZY200P01 ICs Transistors 1.5V Drive Pch MOSFET Discrete 2010.07.21 RZY200P01 NEW Semiconductors The industry's highest efficiency MOSFETs for Transistors DC/DC power supplies Design Model Data... See More ⇒
Detailed specifications: RVQ040N05TR, RW1C026ZP, RZE002P02TL, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, K2611, S2N7002DM, SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP
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