All MOSFET. SBSS84LT1G Datasheet

 

SBSS84LT1G Datasheet and Replacement


   Type Designator: SBSS84LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.7 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT-23
 

 SBSS84LT1G substitution

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SBSS84LT1G Datasheet (PDF)

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SBSS84LT1G

BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacehttp://onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted) -50 V 10 W @ 10 VRating Symbol Value UnitP-ChannelDrain-to-Source Voltag

Datasheet: RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , RZQ045P01TR , RZY200P01TL , S2N7002DM , MMD60R360PRH , SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP , SIJ420DP , SIJ458DP .

History: CSD19535KTT | OSG65R125PF | RT3J55M | OSG65R080TT3ZF | DHF50N15 | PKCD0BB | HM9926B

Keywords - SBSS84LT1G MOSFET datasheet

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