SBSS84LT1G Specs and Replacement
Type Designator: SBSS84LT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.7 nS
Cossⓘ - Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-23
SBSS84LT1G substitution
- MOSFET ⓘ Cross-Reference Search
SBSS84LT1G datasheet
bvss84l sbss84lt1g.pdf
BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W SOT-23 Surface Mount Package Saves Board Space http //onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) -50 V 10 W @ 10 V Rating Symbol Value Unit P-Channel Drain-to-Source Voltag... See More ⇒
Detailed specifications: RZE002P02TL, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL, S2N7002DM, RU7088R, SC3018, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, SIJ458DP
Keywords - SBSS84LT1G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMR07N06TS | 2SK1634
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