All MOSFET. SIJ420DP Datasheet

 

SIJ420DP Datasheet and Replacement


   Type Designator: SIJ420DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1085 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SO-8L
 

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SIJ420DP Datasheet (PDF)

 ..1. Size:128K  vishay
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SIJ420DP

New ProductSiJ420DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0026 at VGS = 10 V 50 TrenchFET Power MOSFET20 28.7 nC0.0032 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Dire

Datasheet: S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP , BS170 , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP .

History: VBE1106N | JCS4N65V | LSB65R099GT | LSB65R099GF | STD25NF10 | MTW32N20EG

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