SIJ420DP Specs and Replacement
Type Designator: SIJ420DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
Qg ⓘ - Total Gate Charge: 60 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 1085 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: SO-8L
SIJ420DP substitution
- MOSFET ⓘ Cross-Reference Search
SIJ420DP datasheet
sij420dp.pdf
New Product SiJ420DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0026 at VGS = 10 V 50 TrenchFET Power MOSFET 20 28.7 nC 0.0032 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8L Single Compliant to RoHS Dire... See More ⇒
Detailed specifications: S2N7002DM, SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, IRF730, SIJ458DP, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP
Keywords - SIJ420DP MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: APT50M60L2VRG | JMSH2010PC
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