SIJ420DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIJ420DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 1085 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: SO-8L
SIJ420DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIJ420DP Datasheet (PDF)
..1. Size:128K vishay
sij420dp.pdf
sij420dp.pdf
New ProductSiJ420DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0026 at VGS = 10 V 50 TrenchFET Power MOSFET20 28.7 nC0.0032 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Dire
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
