All MOSFET. SIJ458DP Datasheet

 

SIJ458DP Datasheet and Replacement


   Type Designator: SIJ458DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 892 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: SO-8L
 

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SIJ458DP Datasheet (PDF)

 ..1. Size:129K  vishay
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SIJ458DP

New ProductSiJ458DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0022 at VGS = 10 V 60 TrenchFET Power MOSFET30 40.6 nC0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Direct

Datasheet: SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP , SIJ420DP , IRFZ44N , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP .

History: 2SK3914-01 | SI2301CDS-T1 | 2SK4212-ZK | F10N65 | .8205S | S10H08S | IRF7103Q

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