SIJ458DP Specs and Replacement
Type Designator: SIJ458DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 892 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: SO-8L
SIJ458DP substitution
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SIJ458DP datasheet
sij458dp.pdf
New Product SiJ458DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0022 at VGS = 10 V 60 TrenchFET Power MOSFET 30 40.6 nC 0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8L Single Compliant to RoHS Direct... See More ⇒
Detailed specifications: SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, IRFZ44N, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP, SIR168DP
Keywords - SIJ458DP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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