All MOSFET. SIJ458DP Datasheet

 

SIJ458DP Datasheet and Replacement


   Type Designator: SIJ458DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 892 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: SO-8L
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SIJ458DP Datasheet (PDF)

 ..1. Size:129K  vishay
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SIJ458DP

New ProductSiJ458DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0022 at VGS = 10 V 60 TrenchFET Power MOSFET30 40.6 nC0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Direct

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | SM6A12NSFP | FCPF7N60YDTU

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