SIJ470DP MOSFET Datasheet: N-Ch, 100V, 17.4A. Full specification with pinout and replacement list

SIJ470DP Specs and Replacement

Type Designator: SIJ470DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: SO-8L

SIJ470DP substitution

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SIJ470DP datasheet

..1. Size:163K vishay
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SiJ470DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0091 at VGS = 10 V 58.8 100 % Rg and UIS Tested 100 28.5 nC 0.0100 at VGS = 7.5 V 54.6 Material categorization For definitions of compliance please see ... See More ⇒

9.1. Size:164K vishay
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SiJ478DP www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0080 at VGS = 10 V 60a Material categorization 80 0.0088 at VGS = 6.0 V 60a 17.1 nC For definitions of compliance please see 0.0115 at VGS = 4.5 V 54 www.vishay.com/doc?99912 ... See More ⇒

Detailed specifications: SC3018, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, SIJ458DP, IRF3205, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP, SIR168DP, SIR172ADP