All MOSFET. SIJ470DP Datasheet

 

SIJ470DP Datasheet and Replacement


   Type Designator: SIJ470DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: SO-8L
 

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SIJ470DP Datasheet (PDF)

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SIJ470DP

SiJ470DPwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)of RDS(on), Qg, Qsw and Qoss0.0091 at VGS = 10 V 58.8 100 % Rg and UIS Tested100 28.5 nC0.0100 at VGS = 7.5 V 54.6 Material categorization: For definitions of compliance please see

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SIJ470DP

SiJ478DPwww.vishay.comVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0080 at VGS = 10 V 60a Material categorization: 80 0.0088 at VGS = 6.0 V 60a 17.1 nCFor definitions of compliance please see 0.0115 at VGS = 4.5 V 54www.vishay.com/doc?99912

Datasheet: SC3018 , SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP , SIJ420DP , SIJ458DP , IRF3205 , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP .

History: UT3N10L-AE3-R | AP2330GN | AP9970GW | 2SK3575-S | IXTA48N20T | 2SK3386 | 2SK3638

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