SIJ482DP PDF and Equivalents Search

 

SIJ482DP Specs and Replacement

Type Designator: SIJ482DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V

Qg ⓘ - Total Gate Charge: 47 nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: SO-8L

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SIJ482DP datasheet

 ..1. Size:195K  vishay
 sij482dp.pdf pdf_icon

SIJ482DP

New Product SiJ482DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) 100 % Rg and UIS Tested ID (A)a, g Qg (Typ.) Capable of Operating with 5 V Gate Drive 0.0062 at VGS = 10 V Material categorization 0.0065 at VGS = 7.5 V 80 60 24 nC For definitions of compliance please see 0.0095 a... See More ⇒

 9.1. Size:171K  vishay
 sij484dp.pdf pdf_icon

SIJ482DP

New Product SiJ484DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0063 at VGS = 10 V 35g TrenchFET Power MOSFET 30 13.7 nC 0.0082 at VGS = 4.5 V 100 % Rg Tested 35g 100 % UIS Tested PowerPAK SO-8L Single Compliant to RoHS Direc... See More ⇒

Detailed specifications: SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP, SIJ478DP, IRF840, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP, SIR168DP, SIR172ADP, SIR172DP, SIR316DP

Keywords - SIJ482DP MOSFET specs

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