All MOSFET. SIJ484DP Datasheet

 

SIJ484DP Datasheet and Replacement


   Type Designator: SIJ484DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: SO-8L
 

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SIJ484DP Datasheet (PDF)

 ..1. Size:171K  vishay
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SIJ484DP

New ProductSiJ484DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0063 at VGS = 10 V 35g TrenchFET Power MOSFET30 13.7 nC0.0082 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Direc

 9.1. Size:195K  vishay
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SIJ484DP

New ProductSiJ482DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) 100 % Rg and UIS TestedID (A)a, g Qg (Typ.) Capable of Operating with 5 V Gate Drive0.0062 at VGS = 10 V Material categorization:0.0065 at VGS = 7.5 V 80 60 24 nCFor definitions of compliance please see0.0095 a

Datasheet: SCH1345 , SCH2825 , SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , 20N60 , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , SIR172DP , SIR316DP , SIR330DP .

History: SIJ482DP | STW70N60DM2 | AP4528GH | PDMN66D0LDW | PJM3401PSA | PJM3401PSC | AP3C023AMT

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