SIJ484DP Datasheet and Replacement
Type Designator: SIJ484DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 21.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 335 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: SO-8L
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SIJ484DP Datasheet (PDF)
sij484dp.pdf

New ProductSiJ484DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0063 at VGS = 10 V 35g TrenchFET Power MOSFET30 13.7 nC0.0082 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Direc
sij482dp.pdf

New ProductSiJ482DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) 100 % Rg and UIS TestedID (A)a, g Qg (Typ.) Capable of Operating with 5 V Gate Drive0.0062 at VGS = 10 V Material categorization:0.0065 at VGS = 7.5 V 80 60 24 nCFor definitions of compliance please see0.0095 a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: TK2P60D | IRFBG20



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