SIJ800DP Specs and Replacement
Type Designator: SIJ800DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SO-8L
SIJ800DP substitution
- MOSFET ⓘ Cross-Reference Search
SIJ800DP datasheet
sij800dp.pdf
SiJ800DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0095 at VGS = 10 V 20a TrenchFET Power MOSFET 40 16 nC 100 % Rg Tested 0.0115 at VGS = 4.5 V 20a 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8L Single APP... See More ⇒
Detailed specifications: SCH2825, SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, IRF540N, SIR158DP, SIR166DP, SIR168DP, SIR172ADP, SIR172DP, SIR316DP, SIR330DP, SIR401DP
Keywords - SIJ800DP MOSFET specs
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History: SMG2314NE
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