All MOSFET. SIJ800DP Datasheet

 

SIJ800DP Datasheet and Replacement


   Type Designator: SIJ800DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SO-8L
 

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SIJ800DP Datasheet (PDF)

 ..1. Size:133K  vishay
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SIJ800DP

SiJ800DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0095 at VGS = 10 V 20a TrenchFET Power MOSFET40 16 nC 100 % Rg Tested0.0115 at VGS = 4.5 V 20a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8L SingleAPP

Datasheet: SCH2825 , SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , IRF540N , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , SIR172DP , SIR316DP , SIR330DP , SIR401DP .

History: AP68N06G | SEFM350 | D4N65 | SUD20P15-306 | RU13N65R | 2SK3872-01S | NTR0202PLT1G

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